宋春燕 |
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| chunyansong@shzu.edu.cn | |||||||||||||||||||||
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| 基本信息 | 性别 | 女 | 出生年月 | 1981.9 | 民族 | 汉族 |
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| 北京大学 | 博士学位 | 2015.09-2019.06 | ||||||||||||||||||
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| 物bat365官网登录入口 | 专业:凝聚态物理 | |||||||||||||||||||
| 工作经历 | bat365官网登录入口 | 副教授,硕士生导师 | 2005.08-至今 | ||||||||||||||||||
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| bat365官网登录入口 | 专业方向:宽禁带半导体 | |||||||||||||||||||
| 主要业绩 | 研究宽禁带半导体材料中的杂质缺陷与控制,GaN基半导体功率电子器件研制与器件物理, | ||||||||||||||||||||
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| 包括材料物性分析、缺陷物理、理论计算模拟和外延生长等。近年来发表物理学术期刊SCI论文10余篇,授权专利1件,参编教材2部,主持国家自然科学青年基金1项、参与负责完成国家自然科学新疆联合基金1项、作为负责和主要参与bat365官网登录入口高层次人才项目3项,主持完成校级及院级课程思政项目2项,主持校级教育教学改革项目1项,主要参与课程思政及过程性改革项目4项。 | ||||||||||||||||||||
| 研究方向 | (1) 宽禁带半导体物理、材料与器件 | ||||||||||||||||||||
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| (2) 材料缺陷理论计算 | ||||||||||||||||||||
| 在研项目 | (1)《缓冲层碳杂质影响氮化镓外延薄膜可靠性的机理研究》 | ||||||||||||||||||||
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| 青年科学基金项目,2022.01-2024.12,30万。(主持) | ||||||||||||||||||||
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| (2)《石蜡/蛭石复合定形相变储能材料的稳定性与强化传热机制研究》 国家自然科学基金项目,2019.01-2021.12, 56万。(乙方负责人) | ||||||||||||||||||||
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| (3)《缓冲层碳浓度影响GaN基功率电子器件可靠性的机理研究》 bat365官网登录入口高层次人才科研启动资金专项,2020.6-2023.6, 10万。(主持) | ||||||||||||||||||||
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| 发表文章 | ◎ 近5年以第一/通讯作者身份发表的论文 | ||||||||||||||||||||
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| (1) Chunyansong, Hui Liao, Ningxuan Yang, Rui Wang, Guanghui Tang, Weicheng Cao. The role of point defects related with carbon impurity on the kink of log J-V in GaN-on-Si epitaxial layers, Nanotechnology, 2022, 33, 495702. | ||||||||||||||||||||
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| (2) ChunyanSong, XuelinYang*, DingWang, PanfengJi, ShanWu, Yue Xu, MaojunWang, BoShen*. The effect of kink and vertical leakage mechanisms in GaN-on-Si epitaxial layers, Semicond.Sci.Technol, 2020, 35, 085015. | ||||||||||||||||||||
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| (3) Chunyan Song, Xuelin Yang*, Panfeng Ji, Jun Tang, Shan Wu, Yue Xu, Ali Imran, Maojun Wang, Zhijian Yang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen*. Impact of Silicon Substrate with Low Resistivity on Vertical Leakage Current inAlGaN/GaN HEMTs, Appl. Sci., 2019, 9, 2373. | ||||||||||||||||||||
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| (4) Anqi Hu,Chunyan Song#, Xuelin Yang*, Xiaoying He, Bo Shen*, Xia Guo*. Role of hole trapping in the unintentionally doped GaN layer in suppressing thetwo-dimensional electron gas degradation in AlGaN/GaN heterostructures on Si. Nanotechnology, 2019, 30, 314002.(共同一作) | ||||||||||||||||||||
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| (5) Chunyan Song, Xuelin Yang* , Panfeng Ji, Jun Tang, Anqi Hu, Yuxia Feng, Wei Lin, Weikun Ge, Zhijian Yang, Fujun Xu, Bo Shen*. Role of electroninjection on vertical leakage in GaN-on-Si epitaxial layers, Superlattices andMicrostructures, 2019, 128, 199-203. | ||||||||||||||||||||
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| (6) A. Q. Hu, X. L. Yang, J. P. Cheng, C. Y. Song, S. Wu, J. Zhang, Y. X. Feng, P. F. Ji, N. Tang, W. K. Ge, X. Q. Wang, and B. Shen. Evidence of vertical leakage induced current degradation and identification of traps with large lattice relaxation in AlGaN/GaN heterostructures on Si. Applied Physics Letters, 2018, 112, 032104. |